Samsung Advanced Institute of Technology and Seoul National University have produced nitride semiconductor light-emitting diode (LED) structures on amorphous glass [Jun Hee Choi et al, Nature Photonics, published online 9 October 2011].
The structures consisted of an array of nearly single-crystalline truncated pyramids of gallium nitride (GaN) on which further layers of indium gallium nitride (InGaN) multi-quantum wells, magnesium-doped p-GaN, polymer filling and indium tin oxide (ITO) were deposited.
The researchers see potential applications as including using the pyramids as pixels in displays such as for large-area inorganic LED televisions, concluding: “This method should provide a new and attractive tool for realizing ideal high-performance electroluminescence devices that demonstrate both low cost and high device performance, as well as scalability to large sizes.”
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